This is a shared use device in the university.
Results of EBSP for mc-Si
Expansion of Stacking Faults in 4H-SiC中
Horizontal dark lines, which are the intersecting lines between a Stacking Fault and the surface, is elongated by electron beam irradiation.
Equipment for Spreading Resistance Measurement
Remote Plasma Irradiation
We deposited various SiGe epitaxial films on Si substrate.
I will upload photos of lab's events here.