Device Material lab.
- Dislocation dynamics in semiconductors
- Stacking Fault control and partial dislocation motion in 4H-SiC
- Plasma (H, O, N) treatment effects on electric properties of beta-Ga2O3
- Annihilation of electronic levels of metalic impurities in mc-Si for solar cells under reverse bias application
Hayashi and Nishikawa Group
- See here