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@@The Forum on the Science and Technology of Silicon Materials 2018

2018.6.5 Œ»Ý@ƒvƒƒOƒ‰ƒ€

11ŒŽ18“úi“új

16:00-19:00 Registration
18:00-20:00 Welcome Party




11ŒŽ19“úiŒŽj

AM

8:30-8:45    Opening address @@––‰ª_Ž¡


8:45-9:15 Prof. Jan Vanhellemont’Ç“‰ À’·: 

  8:45-9:15
––‰ª_Ž¡i‰ª ŽRŒ§—§‘åŠwjC‘¾Žq•q‘¥iMB‘åŠwjC‘¼


9:15-10:25 ƒV ƒŠƒRƒ“Œ‹»¬’·EƒEƒF[ƒn
À’·: 

  9:15-9:55
’†‘º _ŽO (‰ªŽRŒ§—§‘åŠw) The Effect of Impurities and Thermal Stress on Point Defects
and the Grown-in Defect Formation during Single Crystal Silicon
growth from a melt
  9:55-10:25
‰¡ŽR —³‰î (SUMCO/‹ã‘剞—ÍŒ¤)



10:25-10:40 Break


10:40-12:30 Œ‡ Š×¥”÷—Ê•sƒ•¨EƒQƒbƒ^ƒŠƒ“ƒOE•]‰¿ À’·:

  10:40-11:20 G. Kissinger (IHP GmbH)
  11:20-12:00 M. Sluydts (Ghent Univ.) The road to accuracy: a comparison of state-of-the-art ab initio methods
  12:00-12:30 –xì ’q”V (ƒOƒ[ƒoƒ‹ƒEƒF[ƒnƒYEƒWƒƒƒpƒ“)
Analysis of Oxygen Precipitation by High-parallel X-ray Diffuse Scattering


12:30-13:30 Lunch

PM

13:30-15:40 Œ‡ Š×E”÷—Ê•sƒ•¨EƒQƒbƒ^ƒŠƒ“ƒOE•]‰¿
À’·:

  13:30-14:10 E. Simoen (IMEC)
Metal contamination in semiconductor devices: a neveer ending story?
  14:10-14:40 ™] —²ˆê (“ŒƒŒƒŠƒT[ƒ`ƒZƒ“ƒ^[)
Semi-quantitative analysis of defects in silicon power devices by cross-sectional cathodoluminescence (tentative)
  14:40-15:10 ŽOŽŸ ”Œ’m (SUMCO)
Novel Measurement Methods for Low Carbon Concentration in Silicon using DLTS and room temperature PL

15:10-15:40 ‰iˆä —E‘¾ (ƒOƒ[ƒoƒ‹ƒEƒF[ƒn ƒYEƒWƒƒƒpƒ“)
Reduction of carbon during crystal growth and impact of carbon on bulk lifetime of Si crystal


15:40-15:55 Break


15:55-17:45 ƒVƒ‡[ƒgƒvƒŒƒ[ƒ“ ƒe[ƒVƒ‡ƒ“ À’·:




17:45-19:45 ƒ|ƒXƒ^[ƒZƒbƒVƒ‡ƒ“   À’·:





11ŒŽ20“úi‰Îj

AM

8:30-10:50 ƒp ƒ[ƒfƒoƒCƒXEÞ—¿
 À’·:

  8:30-9:10 ‹v•Û“c O (ŒF –{‘åŠw) New cleanroom technology realizing Japanese semiconductor mass production under innovative energy saving
  9:10-9:50 G. Wachutka (Tech. Univ. Munich)
Virtual Prototyping of High Power Devices and Modules
  9:50-10:20 ¼àV Lˆê (‹ãB‘åŠw)
@

10:20-10:50 –© ’‰Œº (ŽO•H“d‹@)
Si wafer material as key issue for high voltage bipolar power device: Effects of residual oxygen and carbon in FZ, MCZ and Epitaxy


10:50-11:05 Break


11:05-12:35 ƒp ƒ[ƒfƒoƒCƒXEÞ—¿
À’·:

  11:05-11:35 ŽO’J •Žu (ŽY‘Œ¤)
Solution growth of 4H-SiC bulk crystal: Effect of additives on step structures of 4H-SiC crystals
  11:35-12:05 ²X–Ø Œö•½ (ƒmƒxƒ‹ƒNƒŠƒXƒ^ƒ‹ƒeƒNƒmƒƒW\)
Development of Ga2O3 vertical trench SBDs and FETs
  12:05-12:35 Îì —R‰Á—¢ (ƒtƒ@ƒCƒ“ƒZƒ‰ƒ~ƒbƒNƒXƒZƒ“ƒ^[)
Characterization of dislocations in wide bandgap semiconductors


PM

12:35 ƒOƒ‹[ƒvŽÊ^ŽB‰e
12:40-18:00 ƒGƒNƒXƒJ[ƒVƒ‡ƒ“
18:00-21:00 Banquet (Young Resercher Poster Award)





11ŒŽ21“úi…j

AM

8:30-10:40 ƒV ƒŠƒRƒ“‘¾—z“d’rŠÖ˜A À’·:

  8:30-9:10 S. Binetti (Univ. Milano-Bicocca) 
Photoluminescence and infrared spectroscopy for impurities identification  in silicon for photovoltaic applications
  9:10-9:40 ¬–¸ ŒúŽu(–¾Ž¡‘åŠw)
Research on crystalline Si solar cells by universities in Japan under NEDO support
  9:40-10:10 ŒBŠ| Œ’‘¾˜N (–¼ŒÃ‰®‘åŠw) Generation and propagation of defects in multicrystalline silicon for solar cells

10:10-10:40 ––‰v ’ (’}”g‘åŠw) Significant impact of Ba to Si deposition rate ratios during molecular beam epitaxy on electrical and optical properties of BaSi2 absorber layers


10:40-10:55 Break


10:55-12:35 ƒC ƒ[ƒWƒZƒ“ƒTƒfƒoƒCƒXEÞ—¿ À’·:


10:55-11:35 ìl Ë“ñ (Ã‰ª‘åŠw)
Recent Progress of Image Sensor Device and Technology

11:35-12:05 Œã“¡ ³‰p (NHK‹ZŒ¤)
Pixel-Parallel Three-Dimensional Integrated CMOS Image Sensors by Using Direct Bonding of Silicon-on-Insulator Wafers for Next-Generation Television Systems

12:05-12:35 ŽRŒû ’¼ (ƒ‹ƒlƒTƒXƒGƒŒƒNƒgƒƒjƒNƒX)
Investigation of Implantation Damage Recovery and Gettaring Technology for CMOS Image Sensors


12:35-13:00 Snack


PM

13:00-14:30 ƒC ƒ[ƒWƒZƒ“ƒTƒfƒoƒCƒXEÞ—¿  À’·: 

  13:00-13:30 ²“¡ DO (ƒpƒiƒ\ƒjƒbƒN)
Characterization of residual defects created during image sensor process in Si substrate
  13:30-14:00 ¯ŽR •qO (ƒLƒ„ƒmƒ“)
Influence of various impurities on performance of CMOS image
  14:00-14:30 ‰œŽR —º•ã (SUMCO)
Diffusion behavior of light elements in molecular ion implanted silicon epitaxial wafers for advanced CMOS image sensor


14:30-14:45 Closing remarks  @@ ––‰ª_Ž¡



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